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Chinese Journal of High Pressure Physics  > 1999  >  13(3): 169-172 .
ZHANG Tie-Chen, GAO Chun-Xiao, WANG Cheng-Xin, JI Yan-Ju, ZOU Guang-Tian. Cubic Boron Nitride Crystal-Diamond Film Heterjunction p-n Diode[J]. Chinese Journal of High Pressure Physics, 1999, 13(3): 169-172 . doi: 10.11858/gywlxb.1999.03.002
Citation: ZHANG Tie-Chen, GAO Chun-Xiao, WANG Cheng-Xin, JI Yan-Ju, ZOU Guang-Tian. Cubic Boron Nitride Crystal-Diamond Film Heterjunction p-n Diode[J]. Chinese Journal of High Pressure Physics, 1999, 13(3): 169-172 . doi: 10.11858/gywlxb.1999.03.002
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Cubic Boron Nitride Crystal-Diamond Film Heterjunction p-n Diode

doi: 10.11858/gywlxb.1999.03.002

  • State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023, China

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  • Corresponding author: ZHANG Tie-Chen
  • Received Date: 14 Sep 1998
  • Rev Recd Date: 26 Oct 1998
  • Publish Date: 05 Sep 1999
    Abstract
  • In this paper, B doped P type diamond film was grown on Si doped N type cubic boron nitride (cBN) flaky crystal by means of hot filament CVD method. A heterjunction p-n diode was fabricated. The electrical test shows that it has high rectification efficiency.

     

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    • References(4)
  • Zou Guangtian, Gao Chunxiao, Jin Zengsun, et al. Characteristic of Epitaxial Growth of Diamond Film on Cubic Boron Nitride Surface by DC Glow Discharge Chemical Vaper Deposition. In: Saito S, Fujimori N, Fukunaga O, et al, eds. Advances in New Diamond Science and Technologe. Tokyo: MYU, 1994: 291.
    Tomikawa T, Nishibayashi Y, Shikata S, et al. Diamond and Related Materials, 1994, 3: 1389.
    张铁臣, 王明光, 郭伟力, 等. 髙压物理学报, 1998, 12(3): 168.
    Gao Chunxiao, Zhang Tiechen, Zou Guangtian, et al. Chin Phys Lett, 1996, 13: 779.
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