Electrical Properties and Metallic Transitions in Nanocrystals Si at High Pressure

doi: 10.11858/gywlxb.1999.02.009

• BAO Zhong-Xing^{1,2,3 ,}  , 
• HE Yu-Liang⁴ , 
• WANG Wei-Xiang⁵ , 
• LIU Cui-Xia¹ , 
• CHEN Wei³

• 1.

  Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;

• 2.

  International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110015, China;

• 3.

  Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

• 4.

  Beijing University of Aeronautics and Astronautics, Beijing 100083, China;

• 5.

  South China Normal University, Guangzhou 510631, China