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Chinese Journal of High Pressure Physics  > 1997  >  11(4): 303-306 .
LI Peng-Yuan, GENG Man, TIE Jun, HUANG Pei-Ji, CUI Xi-Rong, YAN Bing, WANG Jing-Quan, JIANG Yuan-Qi. A Study of the Heat Resistance of N+ Implanted Synthetic Diamond[J]. Chinese Journal of High Pressure Physics, 1997, 11(4): 303-306 . doi: 10.11858/gywlxb.1997.04.012
Citation: LI Peng-Yuan, GENG Man, TIE Jun, HUANG Pei-Ji, CUI Xi-Rong, YAN Bing, WANG Jing-Quan, JIANG Yuan-Qi. A Study of the Heat Resistance of N+ Implanted Synthetic Diamond[J]. Chinese Journal of High Pressure Physics, 1997, 11(4): 303-306 . doi: 10.11858/gywlxb.1997.04.012
shu

A Study of the Heat Resistance of N+ Implanted Synthetic Diamond

doi: 10.11858/gywlxb.1997.04.012

  • Ion Beam Research Center, SWIP, Chengdu 610041, China

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  • Corresponding author: LI Peng-Yuan
  • Received Date: 20 Jan 1997
  • Rev Recd Date: 20 Jun 1997
  • Publish Date: 05 Dec 1997
    Abstract
  • Synthetic diamond crystals implanted with 20～70 keV N+ have been investigated. The heat resistance of the implanted synthetic diamond crystals was measured by DTA. It shows that its heat resistance increased with the ion doses, though this enhancement slows down as the ion energy increases, it also shows that transformation of the ion implanted diamond into graphite under high temperature condition was greatly improved.

     

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