Study on Diamond Film Deposition Growth on Stainless Steel Using Gas Source of CH3OH/H2

ZHANG Xiao-Ping

doi:10.11858/gywlxb.1996.03.012

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Chinese Journal of High Pressure Physics > 1996 > 10(3): 236-240 .

ZHANG Xiao-Ping. Study on Diamond Film Deposition Growth on Stainless Steel Using Gas Source of CH3OH/H2[J]. Chinese Journal of High Pressure Physics, 1996, 10(3): 236-240 . doi: 10.11858/gywlxb.1996.03.012

Citation:

ZHANG Xiao-Ping. Study on Diamond Film Deposition Growth on Stainless Steel Using Gas Source of CH3OH/H2[J]. Chinese Journal of High Pressure Physics, 1996, 10(3): 236-240 . doi: 10.11858/gywlxb.1996.03.012

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Study on Diamond Film Deposition Growth on Stainless Steel Using Gas Source of CH3OH/H2

doi: 10.11858/gywlxb.1996.03.012

ZHANG Xiao-Ping

Zhengzhou Grain College, Zhengzhou 450052, China

More Information

Corresponding author: ZHANG Xiao-Ping
Received Date: 31 Jan 1996
Rev Recd Date: 23 Apr 1996
Publish Date: 05 Sep 1996

Abstract

Abstract

By means of microwave chemical vapor deposition (MWCVD) method, CH3OH/H2 gas mixtures are used as a gas source, along with a 30 nm amorphous thick silicon as a transition layer, a diamond film can successfully be grown on a stainless steel substrate, with a lowest growth temperature of 420 ℃. Tests show that the joint strength between the diamond film and the stainless steel substrate is high enough to be used as a wear-resisting layer in industry.
- CH3OH-H2,
- stainless steel,
- diamond film,
- MWCVD