Volume 10 Issue 2
Jun 2015
Turn off MathJax
Article Contents
YANG Guo-Wei. The Mechanism of the Negative Bias-Enhanced Nucleation of Diamond[J]. Chinese Journal of High Pressure Physics, 1996, 10(2): 114-121 . doi: 10.11858/gywlxb.1996.02.006
Citation: YANG Guo-Wei. The Mechanism of the Negative Bias-Enhanced Nucleation of Diamond[J]. Chinese Journal of High Pressure Physics, 1996, 10(2): 114-121 . doi: 10.11858/gywlxb.1996.02.006

The Mechanism of the Negative Bias-Enhanced Nucleation of Diamond

doi: 10.11858/gywlxb.1996.02.006
More Information
  • Corresponding author: YANG Guo-Wei
  • Received Date: 28 Feb 1995
  • Rev Recd Date: 07 Dec 1995
  • Publish Date: 05 Jun 1996
  • The mechanism of substrates negative bias-enhanced nucleation of diamond, in the growth of diamond thin films by plasma CVD methods is suggested. A relationship between the effect of bias-enhanced nucleation and deposition condition such as the reaction pressures and carbon fractions are obtained from the model. The model reasonably explains why the bias-enhanced nucleation of diamond increase with the decrease of reaction pressures and the increase of carbon fraction, as the bias is enhanced. The model is also in accordance with the reported data.

     

  • loading
  • Zhu W, Stoner B R, Williams B E, et al. Proc IEEE, 1991, 79: 621.
    Hirabayaski K, Tanguchi Y. Appl Phys Lett, 1988, 53: 1815.
    杨国伟. 高压物理学报, 1994, 8(3): 229.
    Yugo S, Kanai T, Kimura T, et al. Appl Phys Lett, 1991, 58: 1036.
    Stoner B R, Ma G M, Wolter S D, et al. Phys Rev B, 1992, 45: 11067.
    Stoner B R, Glass J T. Appl Phys Lett, 1992, 60: 698.
    Ojika S, Yamashita S, Kataoka K, et al. Jpn J Appl Phys, 1993, 32: L200.
    Gao C X, Zou G T, Jin Z S. Chin Phys Lett, 1994, 11: 317.
    Katoh M, Aoki M, Kawarada H. Jpn J Appl Phys, 1994, 33: L194.
    Grill A, Meyerson B S, Patel V V, et al. J Appl Phys, 1987, 61: 2874.
    Melton C E, Rudolph. J Chem Phys, 1967, 47: 1711.
    Harris S J, Goodwin D G. J Phys Chem, 1993, 97: 23.
    Winters H F, Horne D E. Surf Sci, 1971, 24: 587.
    Coburn J W, Winters H F. J Appl Phys, 1979, 50: 3189.
    Winters H W, Coburn J W, Chuang T J. J Vac Sci Technol, 1983, B1: 469.
    Wild C, Koidl P. Appl Phys Lett, 1989, 54: 505.
    Richards J. Vacuum, 1984, 34: 559.
    Field D, Klemperer D F, May P W, et al. J Appl Phys, 1991, 70: 82.
    Gat R, Angus J C. J Appl Phys, 1993, 74: 5981.
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Article Metrics

    Article views(6821) PDF downloads(747) Cited by()
    Proportional views
    Related

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return