Studies on the Recrystallization of Graphite during the Process of Diamond Growth under Excess Pressure

Characteristics of co-growing of recrystallized graphite have been reported during the epitaxial growth process of diamond seed under excess pressure. Spontaneous diamond nucleation was inhibited by recrystallized graphite grains which abundantly distributed in lower temperature zone of metal solvent discs. Numerous recrystallized graphite grains, which were in strata structure but disordered each other, occurred with some amorphous carbon. Those phenomena have been considered to be related to the condition under long time lower excess pressure: plentiful carbon in metal solvent discs, high temperature and high pressure are suitable for well recrystallization but insufficient for graphitization. It has also been discussed that the active carbon atoms rather than recrystallized graphite grains might play as a source of carbon for epitaxial growth of diamond under lower excess pressure.