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ZHOU Yan-Ping, YAN Xue-Wei, MA Xian-Feng, ZHAO Ting-He, XIE Yun-Fen. Effects of Additive Li8SiN4 on cBN Crystal Morphology[J]. Chinese Journal of High Pressure Physics, 1996, 10(1): 56-62 . doi: 10.11858/gywlxb.1996.01.009
Citation: ZHOU Yan-Ping, YAN Xue-Wei, MA Xian-Feng, ZHAO Ting-He, XIE Yun-Fen. Effects of Additive Li8SiN4 on cBN Crystal Morphology[J]. Chinese Journal of High Pressure Physics, 1996, 10(1): 56-62 . doi: 10.11858/gywlxb.1996.01.009

Effects of Additive Li8SiN4 on cBN Crystal Morphology

doi: 10.11858/gywlxb.1996.01.009
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  • Corresponding author: ZHOU Yan-Ping
  • Received Date: 27 Dec 1994
  • Rev Recd Date: 12 Sep 1995
  • Publish Date: 05 Mar 1996
  • After adding Li8SiN4 into the catalytic system of Li-complex borom nitrides, the glossy transparent cBN brown crystals were synthesized under the conditions of high pressure and high temperature in the range 4.5~5.0 GPa and 1 500~1 800 ℃ respectively. The morphology of cBN crystals is studied. The result shows that the percentage of blocky cBN crystals synthesized with Li8SiN4 increases obviously, and except the partial tuncated tetragonal crystals, the most of them are tuncated octahedral crystals. The edges and corners of cBN crystals are accurate and sharp, and surfaces of them are dense and smooth.

     

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  • Rapoport E. Ann Chim Fr, 1985, 10: 607.
    DeVries R C, Fleischer J F. J Cryst drowth, 1972, 13-14: 88.
    Yamaoka S, Shimomura O, Akaishi M, et al. Physica B, 1986, 139-140: 668.
    Endo T, Fukunaga O, lwata M. J Mater Sci, 1981, 16: 2227.
    Endo T, Fukunaga O, lwata M. US Patent 4 287 164. 1981.
    Sato T, Endo T, Kashima S, et al. J Mater Sci, 1963, 18: 3054.
    Mishima O, Yamaoka S, Fukunaga O. J Appl Phys, 1987, 61: 2822.
    Hirano S I, Yamaguchi T, Naka S. J Am Ceram Soc, 1981, 64: 734.
    Lorenz H, Bendelyani N A, Gladskaya I S, et al. Proc. 18th European High Pressure Group Meet on High Pressure Research, 1990, High Pressure Res, 1991, 18: 198.
    Biardeau G, Demazeau G, Pouchard M. US Patent 4 810 479. 1989.
    Kabayama T. US Patent 3 959 443. 1976.
    Showa Denko. JP 59 199 514. 1984.
    Mazurenko A M, Leusenko A A, Shimanovich P P, et al. Svehtverd Mater, 1984, 5: 12.
    Llogd E C. Accurate Characterization of the High Pressure Enviroment. NBS-SP-326. 1971: 343.
    周艳平, 阎学伟, 马贤锋, 等. 高压物理学报, 1995, 9(3): 176.
    DeVries R C. Technical Imformation Series. 72-CRD-178. New York: Res and Develop Center, G E, 1972.
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