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Chinese Journal of High Pressure Physics  > 1996  >  10(1): 50-55 .
BAO Zhong-Xing, Tu C S, Anderson J R, Schmidt V H, Pinto N J. Metallic Transitions in Several Kinds of Semiconductors at High Pressure[J]. Chinese Journal of High Pressure Physics, 1996, 10(1): 50-55 . doi: 10.11858/gywlxb.1996.01.008
Citation: BAO Zhong-Xing, Tu C S, Anderson J R, Schmidt V H, Pinto N J. Metallic Transitions in Several Kinds of Semiconductors at High Pressure[J]. Chinese Journal of High Pressure Physics, 1996, 10(1): 50-55 . doi: 10.11858/gywlxb.1996.01.008
shu

Metallic Transitions in Several Kinds of Semiconductors at High Pressure

doi: 10.11858/gywlxb.1996.01.008
  • 1.

    Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;

  • 2.

    International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110015, China;

  • 3.

    Department of Physics, Montana State University, Bozeman MT 59717, USA

More Information
  • Corresponding author: BAO Zhong-Xing
  • Received Date: 06 Mar 1995
  • Rev Recd Date: 06 Mar 1995
  • Publish Date: 05 Mar 1996
    Abstract
  • Resistance-pressure (R-p) relationships in InP0.97As0.03, InP0.5As0.5, Ga0.76In0.24As and Ga0.24In0.76As at room temperature at high pressure have been studied in a diamond anvil cell using resistance measurement. Experimental results indicate that these samples all undergo metallic transitions in the measured pressure range, and their transition pressures are about 10.3, 9.7, 13.5~14.6 and 10~10.4 GPa, respectively. Some improvements were made on the measurement techniques.

     

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    • References(14)
  • Minomura S, Drickamer H G. J Phys Chem Solids, 1962, 23: 451.
    Samara G A, Drickamer H G. J Phys Chem Solids, 1962, 23: 457.
    Vechten J A Van. Phys Rev B, 1973, 7: 1479.
    Pitt G D, Vyas M K R. J Phys C: Solid State Phys, 1973, 6: 274.
    Bundy F P. Rev Sci Instrum, 1975, 46: 1318.
    Yu S C, Spain I L. Solid State Commun, 1978, 25: 49.
    Onodera A, Ohtani A. J Appl Phys, 1980, 51: 2581.
    Baublitz M Jr, Ruoff A L. J Appl Phys, 1982, 53: 6179.
    Froyen S, Cohen M L. Phys Rev B, 1983, 28: 3258.
    Bao Z X, Zhang Z T, Yu T N. Chin Sci Buil, 1984, 29(14): 846.
    Vohra Y K, Weir S T, Ruoff A L. Phys Rev B, 1985, 31: 7344.
    Zhang S B, Erskine D, Cohen M L, et al. Solid State Commun, 1989, 71: 369.
    Bao Z X, Schmidt V H. J Appl Phys, to be Published.
    Bao Z X, Dalai N S, Schmidt V H, et al. Bull Am Phys Soc, 1993, 38(1): 151.
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