The Preparation of Diamond Film with the Method of Electron Assisted Chemical Vapor Deposition

GU Chang-Zhi; WANG Chun-Lei; JIN Zeng-Sun; L&uuml; Xian-Yi; ZOU Guang-Tian

doi:10.11858/gywlxb.1994.03.010

Volume 8 Issue 3

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Chinese Journal of High Pressure Physics > 1994 > 8(3): 220-223 .

GU Chang-Zhi, WANG Chun-Lei, JIN Zeng-Sun, Lü Xian-Yi, ZOU Guang-Tian. The Preparation of Diamond Film with the Method of Electron Assisted Chemical Vapor Deposition[J]. Chinese Journal of High Pressure Physics, 1994, 8(3): 220-223 . doi: 10.11858/gywlxb.1994.03.010

Citation:

GU Chang-Zhi, WANG Chun-Lei, JIN Zeng-Sun, Lü Xian-Yi, ZOU Guang-Tian. The Preparation of Diamond Film with the Method of Electron Assisted Chemical Vapor Deposition[J]. Chinese Journal of High Pressure Physics, 1994, 8(3): 220-223 . doi: 10.11858/gywlxb.1994.03.010

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The Preparation of Diamond Film with the Method of Electron Assisted Chemical Vapor Deposition

doi: 10.11858/gywlxb.1994.03.010

State Key Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130023, China

More Information

Corresponding author: GU Chang-Zhi
Received Date: 04 Sep 1993
Rev Recd Date: 16 Oct 1993
Publish Date: 05 Sep 1994

Abstract

Abstract

A high quality diamond film which has a high growth velocity has been synthesized on Si substrates by means of the electron assisted chemical vapor deposition method. The maximum growth velocity is 7 m/h and the growth areas of diamond film is 40 mm. The growth characteristics of the high quality diamond film were studied.
- electron assisted,
- chemical vapor deposion,
- diamond film