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Chinese Journal of High Pressure Physics  > 1994  >  8(1): 57-59 .
XIE Yuan-Nan. Electronic Structure and EOS of -SiC[J]. Chinese Journal of High Pressure Physics, 1994, 8(1): 57-59 . doi: 10.11858/gywlxb.1994.01.009
Citation: XIE Yuan-Nan. Electronic Structure and EOS of -SiC[J]. Chinese Journal of High Pressure Physics, 1994, 8(1): 57-59 . doi: 10.11858/gywlxb.1994.01.009
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Electronic Structure and EOS of -SiC

doi: 10.11858/gywlxb.1994.01.009

  • Beijing Instiatute of Apploed Physics and Computational Mathematics, Beijing 100088, China

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  • Corresponding author: XIE Yuan-Nan
  • Received Date: 17 Sep 1993
  • Rev Recd Date: 17 Sep 1993
  • Publish Date: 05 Mar 1994
    Abstract
  • By using LMTO-ASA method, the computational results including electronic structure and EOS of covalent crystal -SiC are presented. The compressibility ranges from 1.0 to 2.5. We put two empty spheres into WS sell to simulate compact-packed situation. It is shown that the used method is adapted for loose-packed crystal.

     

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    • References(8)
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