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Chinese Journal of High Pressure Physics  > 1993  >  7(4): 301-304 .
YANG Guo-Wei, MAO You-De, Zhang S G. The control of Graphite Component in Diamond Thin Films Growth by the Hot Filament CVD Method[J]. Chinese Journal of High Pressure Physics, 1993, 7(4): 301-304 . doi: 10.11858/gywlxb.1993.04.010
Citation: YANG Guo-Wei, MAO You-De, Zhang S G. The control of Graphite Component in Diamond Thin Films Growth by the Hot Filament CVD Method[J]. Chinese Journal of High Pressure Physics, 1993, 7(4): 301-304 . doi: 10.11858/gywlxb.1993.04.010
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The control of Graphite Component in Diamond Thin Films Growth by the Hot Filament CVD Method

doi: 10.11858/gywlxb.1993.04.010
  • 1.

    No.014 Center of Ministry of Aviation and Astronautics, Luoyang 471009, China;

  • 2.

    Department of Applied Physics, Hefei University of Technology, Hefei 230009, China;

  • 3.

    Department of Physics, University of Alabama, Birmingham AL 35205, USA

More Information
  • Corresponding author: YANG Guo-Wei
  • Received Date: 28 Dec 1992
  • Rev Recd Date: 23 Aug 1993
  • Publish Date: 05 Dec 1993
    Abstract
  • The effect of the deposition conditions on the graphite or amorphous carbon component in the formation of diamond thin films by HFCVD method was studied. We found that high CH3COCH3 concentration or low-substrate temperature would cause the graphit or amorphous carbon component of the formed films to increase.

     

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