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PU Feng-Nian, BI Xiao-Qun, DING Yu-Zhen, GOU Qing-Quan. Relative Electrical Resistance of Tungsten under High Pressure[J]. Chinese Journal of High Pressure Physics, 1991, 5(4): 288-290 . doi: 10.11858/gywlxb.1991.04.007
Citation: PU Feng-Nian, BI Xiao-Qun, DING Yu-Zhen, GOU Qing-Quan. Relative Electrical Resistance of Tungsten under High Pressure[J]. Chinese Journal of High Pressure Physics, 1991, 5(4): 288-290 . doi: 10.11858/gywlxb.1991.04.007

Relative Electrical Resistance of Tungsten under High Pressure

doi: 10.11858/gywlxb.1991.04.007
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  • Corresponding author: PU Feng-Nian
  • Received Date: 06 Jul 1991
  • Rev Recd Date: 06 Jul 1991
  • Publish Date: 05 Dec 1991
  • The pressure dependence of relative electrical resistance of tungsten is measured in the DAC by our established method under the pressure from 0.8 GPa to 30.8 GPa. The measurement below 10 GPa is in good agreement with that of Bridgman. In the pressure range from 10 to 30.8 GPa, the relative electrical resistance of tungsten decreases smoothly with the increasing pressure. The data above 10 GPa have not ben reported to our knowledge so far.

     

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    蒲丰年, 丁玉珍, 芶清泉. 中国科学A辑.
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