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SHEN Zhong-Yi, CHEN Li-Quan, ZHANG Yun, YIN Xiu-Jun, LIU Yong, WANG Chao-Ying, Cros C. Pressure Dependence of Crystallization Temperature of a Silica Contained Oxide Ionic Glass[J]. Chinese Journal of High Pressure Physics, 1990, 4(4): 254-258 . doi: 10.11858/gywlxb.1990.04.003
Citation: SHEN Zhong-Yi, CHEN Li-Quan, ZHANG Yun, YIN Xiu-Jun, LIU Yong, WANG Chao-Ying, Cros C. Pressure Dependence of Crystallization Temperature of a Silica Contained Oxide Ionic Glass[J]. Chinese Journal of High Pressure Physics, 1990, 4(4): 254-258 . doi: 10.11858/gywlxb.1990.04.003

Pressure Dependence of Crystallization Temperature of a Silica Contained Oxide Ionic Glass

doi: 10.11858/gywlxb.1990.04.003
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  • Corresponding author: SHEN Zhong-Yi
  • Received Date: 26 Jun 1990
  • Rev Recd Date: 12 Oct 1990
  • Publish Date: 05 Dec 1990
  • The crystallization behavior of amorphous lithium ionic conductor 0.3Li2O-0.67SiO2-0.03V2O5 has been studied under ambient and high pressures. There were two steps for the crystallization of the amorphous material. Li2Si2O5 was formed in the first step at 560 ℃ under ambient pressure while the precipitation of SiO2 occurred in the second one. The temperature of the first crystallization step Tx1 was greatly influenced by pressure. With the increasing pressure, it increased from 560 ℃ at ambient pressure to 620 ℃, the maximum, at 0.3 GPa and then dropped sharply to 528 ℃ at 0.4 GPa. After that Tx1 increased gradually with a rate of 29 ℃/GPa up to 2 GPa, the highest pressure applied. An explanation will also be given.

     

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