The Temperature Control for the Growth of Synthetic Diamond

QI Zeng-Du

doi:10.11858/gywlxb.1990.03.006

Volume 4 Issue 3

Jul 2015

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Article Contents

Chinese Journal of High Pressure Physics > 1990 > 4(3): 204-209 .

QI Zeng-Du. The Temperature Control for the Growth of Synthetic Diamond[J]. Chinese Journal of High Pressure Physics, 1990, 4(3): 204-209 . doi: 10.11858/gywlxb.1990.03.006

Citation:

QI Zeng-Du. The Temperature Control for the Growth of Synthetic Diamond[J]. Chinese Journal of High Pressure Physics, 1990, 4(3): 204-209 . doi: 10.11858/gywlxb.1990.03.006

QI Zeng-Du. The Temperature Control for the Growth of Synthetic Diamond[J]. Chinese Journal of High Pressure Physics, 1990, 4(3): 204-209 . doi: 10.11858/gywlxb.1990.03.006

Citation:

QI Zeng-Du. The Temperature Control for the Growth of Synthetic Diamond[J]. Chinese Journal of High Pressure Physics, 1990, 4(3): 204-209 . doi: 10.11858/gywlxb.1990.03.006

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The Temperature Control for the Growth of Synthetic Diamond

doi: 10.11858/gywlxb.1990.03.006

QI Zeng-Du

Shanghai Institute of Ceramics, Academia Sinica, Shanghai 200050, China

More Information

Corresponding author: QI Zeng-Du
Received Date: 17 Jan 1990
Rev Recd Date: 17 Jan 1990
Publish Date: 05 Sep 1990

Abstract

Abstract

This paper discusses the temperature control for the growth of synthetic diamond, associated with the cell assembly, temperature gradient in the cell and boundary condition.
- diamond growth,
- temperature control,
- cell assembly,
- temperature gradient,
- boundary condition