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ZHANG Qing-Fu, GOU Qing-Quan, LIU Lü-Hua, HE Ming. Research on Transparent Boron-Skin Diamond Formed with Natural Diamond[J]. Chinese Journal of High Pressure Physics, 1989, 3(1): 11-17 . doi: 10.11858/gywlxb.1989.01.002
Citation: ZHANG Qing-Fu, GOU Qing-Quan, LIU Lü-Hua, HE Ming. Research on Transparent Boron-Skin Diamond Formed with Natural Diamond[J]. Chinese Journal of High Pressure Physics, 1989, 3(1): 11-17 . doi: 10.11858/gywlxb.1989.01.002

Research on Transparent Boron-Skin Diamond Formed with Natural Diamond

doi: 10.11858/gywlxb.1989.01.002
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  • Corresponding author: ZHANG Qing-Fu
  • Received Date: 09 Dec 1988
  • Rev Recd Date: 20 Jan 1989
  • Publish Date: 05 Mar 1989
  • This paper presents a little boron permeated on the surface of natural diamond to form boron skin with the ion implantation method. Tests are done to find whether its heat resistance might be improved. A low-energy ion-implantation device has been designed and improved. Two sources (B2O3 and pure boron) have been implanted to the natural diamond with four energies (8.0, 6.5, 4.5 and 2.5 keV). Boron-skin forms on the surface of diamond. The surface of diamond remains to be colorless and transparent after implantation. On the surface of the natural diamond the B1s peak can't be found by XPS test. It is assumed that no boron atoms exist on the diamond surface. But after ion implanting, obvious B1s peak is found on the surface of natural diamond, then its surface structure is analyzed with the surface testing. Tests show that boron atoms and carbon atoms on diamond surface form a boron-carbon structure. After TGA tests, the heat resistance has been improved in almost the same degree when four kinds of energy are used. But it is better when pure B is used than B2O3. It also shows that heat resistance of boron-skin diamond is only dependent upon the B atoms on the surface and is not upon the B atoms below the surface.

     

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  • 芶清泉. 吉林大学学报(自然科学版), 1978, (2).
    芶清泉, 刘履华, 张清福. 高压物理学报, 1987, (3): 18.
    亓曾笃. 人工晶体, 1983, (12): 126.
    郝兆印. 吉林大学学报(自然科学版), 1986, (2).
    马膺. 人工晶体, 1984, 13(2).
    Hartley N E W. Metastable Materials Formation by Ion Implantation, 1982: 295.
    林文廉, 张国良, 等. 第一届高压学术讨论会论文.
    于洪, 苏梅宁, 等. 人工晶体, 1986, 15(1).
    Maby E W, et al. Appl Phys Lett, 1981, 39(2): 157.
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