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Volume 32 Issue 2
Jan 2018
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Chinese Journal of High Pressure Physics  > 2018  >  32(2): 021102.
LI Xiaoyang, LU Yang, YAN Hao. Electrical Transport Properties of Hexagonal TaSi2 Crystals Based on Structural Stability under High Pressure[J]. Chinese Journal of High Pressure Physics, 2018, 32(2): 021102. doi: 10.11858/gywlxb.20170571
Citation: LI Xiaoyang, LU Yang, YAN Hao. Electrical Transport Properties of Hexagonal TaSi2 Crystals Based on Structural Stability under High Pressure[J]. Chinese Journal of High Pressure Physics, 2018, 32(2): 021102. doi: 10.11858/gywlxb.20170571
shu

Electrical Transport Properties of Hexagonal TaSi2 Crystals Based on Structural Stability under High Pressure

doi: 10.11858/gywlxb.20170571

  • Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China

Funds:

National Natural Science Foundation of China U1530402

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  • Author Bio:

    LI Xiaoyang(1991—), male, master, major in condensed matter physics.E-mail:xiaoyang.li@hpstar.ac.cn

  • Corresponding author: YAN Hao(1975—), male, doctor, major in condensed matter physics.E-mail:yanhao@hpstar.ac.cn
  • Received Date: 26 Apr 2017
  • Rev Recd Date: 03 May 2017
    Abstract
  • As a class of stable low-resistivity and high-temperature materials, tantalum disilicide (TaSi2) has been widely used in integrated circuits.Therefore, its electrical stability is as important as its structural stability.Here, we report the electronic transport properties of TaSi2 based on structural stability under high pressure.Its stable crystallographic structure was studied by synchrotron X-ray diffraction and Raman spectroscopy experiments up to 20 GPa.In situ high-pressure resistance measurements revealed that the resistivity of TaSi2 has a trend to be steady at the value of about 2 μΩ·cm under pressure increasing up to 16.3 GPa.Futher, the electronic structure of TaSi2 under pressure was theoretically calculated to understand its metallic behavior.

     

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