knowledge of professional and technical personnel Notice on the organization of advanced research class on high-pressure science and new materials of engineering
Volume 31 Issue 5
Nov 2017
Turn off MathJax
Article Contents
Chinese Journal of High Pressure Physics  > 2017  >  31(5): 521-528.
ZHANG Lei-Lei, LEI Li, HU Qi-Wei, FENG Lei-Hao, QI Lei, PU Mei-Fang. Two-Mode Behavior in Raman Spectra of Al0.86Ga0.14N Alloy under High Pressure[J]. Chinese Journal of High Pressure Physics, 2017, 31(5): 521-528. doi: 10.11858/gywlxb.2017.05.003
Citation: ZHANG Lei-Lei, LEI Li, HU Qi-Wei, FENG Lei-Hao, QI Lei, PU Mei-Fang. Two-Mode Behavior in Raman Spectra of Al0.86Ga0.14N Alloy under High Pressure[J]. Chinese Journal of High Pressure Physics, 2017, 31(5): 521-528. doi: 10.11858/gywlxb.2017.05.003
shu

Two-Mode Behavior in Raman Spectra of Al0.86Ga0.14N Alloy under High Pressure

doi: 10.11858/gywlxb.2017.05.003

  • Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, China

  • Received Date: 25 Feb 2017
  • Rev Recd Date: 31 Mar 2017
    Abstract
  • Ternary AlxGa1-xN alloy is an important semiconductor for devices in the ultraviolet and visible parts of the spectrum.So far, most studies of high Al content AlxGa1-xN alloy were mainly focused on their properties under ambient pressure and at room temperature but few on their high-pressure behavior.In this work, high Al content Al0.86Ga0.14N was investigated using the in-situ Raman scattering spectrum, and the intrinsic AlN and GaN were also studied as a comparison.The results show that the substitution of Ga by Al can be regarded as a kind of chemical pressure, and the pressure effect caused by the internal substitution can reach that caused by the external compression for GaN and the internal extension for AlN.Due to the crystalline anisotropy, the pressure effect caused by the internal substitution is more significant along the c-axis than that perpendicular to the c-axis.Moreover, the negative pressure, caused by the internal substitution, has a more significant influence on the high-pressure behavior of the AlN-like mode than that of the GaN-like mode.

     

    • FullText(HTML)
  • loading
    • References(28)
  • [1]
    CHANG I F, MITRA S S.Long wavelength optical phonons in mixed crystals [J].Adv Phys, 1971, 20(85):359-404. doi: 10.1080/00018737100101271
    [2]
    DAVYDOV V Y, GONCHARUK I N, SMIRNOV A N, et al.Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys [J].Phys Rev B, 2002, 65(12):125203. doi: 10.1103/PhysRevB.65.125203
    [3]
    KUBALL M.Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/control [J].Surf Interface Anal, 2001, 31(10):987-999. doi: 10.1002/sia.1134/pdf
    [4]
    BELOUSOV A, KATRYCH S, HAMETNER K, et al.AlxGa1-xN bulk crystal growth:crystallographic properties and p-T phase diagram [J].J Cryst Growth, 2010, 312(18):2585-2592. doi: 10.1016/j.jcrysgro.2010.04.017
    [5]
    OHFUJI H, YAMAMOTO M.EDS quantification of light elements using osmium surface coating [J].J Mineral Petrolog Sci, 2015, 110(4):189-195. https://ci.nii.ac.jp/naid/130005094723
    [6]
    ZHOU Y, IRIFUNE T, OHFUJI H, et al.Stability region of K0.2Na0.8AlSi3O8 hollandite at 22 GPa and 2273 K [J].Phys Chem Miner, 2017, 44(1):33-42. doi: 10.1007/s00269-016-0834-5
    [7]
    KOJIMA Y, OHFUJI H.Structure and stability of carbon nitride under high pressure and high temperature up to 125 GPa and 3000 K [J].Diam Relat Mater, 2013, 39:1-7. doi: 10.1016/j.diamond.2013.07.006
    [8]
    TAN L, HU Q, LEI L, et al.Effects of substitution, pressure, and temperature on the phonon mode in layered rocksalt-type Li(1-x)/2Ga(1-x)/2ZnxO (x=0.036-0.515) alloys [J].J Appl Phys, 2015, 118(18):185903. doi: 10.1063/1.4935619
    [9]
    MAO H K, BELL P M.High-pressure physics:sustained static generation of 1.36 to 1.72 megabars [J].Science, 1978, 200(4346):1145-1147. doi: 10.1126-science.200.4346.1145/
    [10]
    XU J A, MAO H K, BELL P M.High-pressure ruby and diamond fluorescence—observations at 0.21 to 0.55 terapascal [J].Science, 1986, 232(4756):1404-1406. doi: 10.1126/science.232.4756.1404
    [11]
    ZHA C S, MAO H, HEMLEY R J.Elasticity of MgO and a primary pressure scale to 55 GPa [J].PNAS, 2000, 97(25):13494-13499. doi: 10.1073/pnas.240466697
    [12]
    TEMPLE P A, HATHAWAY C E.Multiphonon Raman spectrum of silicon [J].Phys Rev B, 1973, 7(8):3685. doi: 10.1103-PhysRevB.7.3685/
    [13]
    DAVYDOV V Y, KITAEV Y E, GONCHARUK I N, et al.Phonon dispersion and Raman scattering in hexagonal GaN and AlN [J].Phys Rev B, 1998, 58(19):12899. http://adsabs.harvard.edu/abs/1998PhRvB..5812899D
    [14]
    DAVYDOV V Y, GONCHARUK I N, SMIRNOV A N, et al.Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1-xN alloys [J].Phys Rev B, 2002, 65(12):125203. doi: 10.1103/PhysRevB.65.125203
    [15]
    HABOECK U, SIEGLE H, HOFFMANN A, et al.Lattice dynamics in GaN and AlN probed with first-and second-order Raman spectroscopy [J].Phys Status Solidi C, 2003(6):1710-1731. doi: 10.1002/pssc.200303130/full
    [16]
    GONI A R, SIEGLE H, SYASSEN K, et al.Effect of pressure on optical phonon modes and transverse effective charges in GaN and AlN [J].Phys Rev B, 2001, 64(3):035205. doi: 10.1103/PhysRevB.64.035205
    [17]
    YIN W W, JIANG X D, HU Q W, et al.Raman study of GaN synthesized by high-pressure solid-state metathesis (HPSSM) reaction [J].Journal of Light Scattering, 2015(1):17-23. http://en.cnki.com.cn/Article_en/CJFDTotal-GSSX201501003.htm
    [18]
    PERLIN P, JAUBERTHIE-CARILLON C, ITIE J P, et al.Raman scattering and x-ray-absorption spectroscopy in gallium nitride under high pressure [J].Phys Rev B, 1992, 45(1):83. doi: 10.1103-PhysRevB.45.83/
    [19]
    MANJÓN F J, ERRANDONEA D, ROMERO A H, et al.Lattice dynamics of wurtzite and rocksalt AlN under high pressure:effect of compression on the crystal anisotropy of wurtzite-type semiconductors [J].Phys Rev B, 2008, 77(20):205204. http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PRBMDO000077000020205204000001&idtype=cvips&gifs=Yes
    [20]
    SANJURJO J A, LOPEZ-CRUZ E, VOGL P, et al.Dependence on volume of the phonon frequencies and the ir effective charges of several Ⅲ-Ⅴ semiconductors[J].Phys Rev B, 1983, 28(8):4579.
    [21]
    YAKOVENKO E V, GAUTHIER M, POLIAN A.High-pressure behavior of the bond-bending mode of AIN [J].J Exp Theor Phys, 2004, 98(5):981-985. doi: 10.1134/1.1767565
    [22]
    YANG X, WU J, CHEN Z, et al.Raman scattering and ferromagnetism of (Ga, Mn)N films grown by MOCVD [J].Solid State Commun, 2007, 143(4):236-239. http://www.sciencedirect.com/science/article/pii/S0038109807003833
    [23]
    HALSALL M P, HARMER P, PARBROOK P J, et al.Raman scattering and absorption study of the high-pressure wurtzite to rocksalt phase transition of GaN [J].Phys Rev B, 2004, 69(23):235207. http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PRBMDO000069000023235207000001&idtype=cvips&gifs=Yes
    [24]
    SHEN L, CUI Q, MA Y, et al.Raman scattering study of AlN nanowires under high pressure [J].J Phys Chem C, 2010, 114(18):8241-8244. doi: 10.1021/jp101065k
    [25]
    LEI L, OHFUJI H, IRIFUNE T, et al.Disorder-activated Raman spectra of cubic rocksalt-type Li(1-x)/2Ga(1-x)/2MxO (M=Mg, Zn) alloys [J].J Appl Phys, 2012, 112(4):043501. http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6270376
    [26]
    BOULFELFEL S E, ZAHN D, GRIN Y, et al.Walking the Path from B4- to B1-type structures in GaN [J].Phys Rev Lett, 2007, 99(12):125505. http://www.ncbi.nlm.nih.gov/pubmed/17930518
    [27]
    WANG S, ZHANG X, YANG H, et al.Effect of fluctuation in Al incorporation on the microstructure, bond lengths, and surface properties of an AlxGa1-xN epitaxial layer [J].Electron Mater Lett, 2015, 11(4):675-681. doi: 10.1007/s13391-015-4424-3
    [28]
    SAITOH H, UTSUMI W, KANEKO H, et al.Synthesis of AlxGa1-xN alloy by solid-phase reaction under high pressure [J].Jap J Appl Phys, 2004, 43(7B):981-983. doi: 10.1143/JJAP.43.L981
    • Relative Articles
    • Supplements(0)
    • Cited By
  • 加载中

Catalog

    通讯作者: 陈斌, bchen63@163.com
    • 1. 

      沈阳化工大学材料科学与工程学院 沈阳 110142

    1. 本站搜索
    2. 百度学术搜索
    3. 万方数据库搜索
    4. CNKI搜索

    Figures(4)  / Tables(1)

    Get Citation
    PDF
    XML

    Article Metrics

    Article views(8353) PDF downloads(375) Cited by()
    Proportional views
    Related

    Copyright©《高压物理学报》编辑部

    Tel:0816-2490042 E-mail:gaoya@caep.cn

    Shu ICP, 11011126 -2

    Supported by: Beijing Renhe Information Technology Co. Ltd support: info@rhhz.net  

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return