高压烧结对n型PbTe基材料热电性能的影响

陈波 孙振亚 黎明发 王善禹 范端  

陈波, 孙振亚, 黎明发, 王善禹, 范端,  . 高压烧结对n型PbTe基材料热电性能的影响[J]. 高压物理学报, 2012, 26(2): 121-126. doi: 10.11858/gywlxb.2012.02.001
引用本文: 陈波, 孙振亚, 黎明发, 王善禹, 范端,  . 高压烧结对n型PbTe基材料热电性能的影响[J]. 高压物理学报, 2012, 26(2): 121-126. doi: 10.11858/gywlxb.2012.02.001
CHEN Bo, SUN Zhen-Ya, LI Ming-Fa, WANG Shan-Yu, FAN Duan, . Effect of High Pressure Sintering on the Thermoelectric Properties of n-Type PbTe[J]. Chinese Journal of High Pressure Physics, 2012, 26(2): 121-126. doi: 10.11858/gywlxb.2012.02.001
Citation: CHEN Bo, SUN Zhen-Ya, LI Ming-Fa, WANG Shan-Yu, FAN Duan, . Effect of High Pressure Sintering on the Thermoelectric Properties of n-Type PbTe[J]. Chinese Journal of High Pressure Physics, 2012, 26(2): 121-126. doi: 10.11858/gywlxb.2012.02.001

高压烧结对n型PbTe基材料热电性能的影响

doi: 10.11858/gywlxb.2012.02.001
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    通讯作者:

    孙振亚 sunzyunisa0121@sina.com

Effect of High Pressure Sintering on the Thermoelectric Properties of n-Type PbTe

  • 摘要: 采用高压烧结技术制备了按偏离化学计量比配制的PbTe基热电材料(Pb0.55Te0.45),重点研究了烧结压力对材料热电性能的影响。研究结果表明:高压烧结过程能有效降低材料中的晶格缺陷,从而显著改变样品中的载流子浓度及其迁移率。与未经烧结的常压熔融样品相比,高压烧结样品的Seebeck系数得到大幅提高,电导率略有降低,室温热导率降低了50%,所以高压烧结样品的品质因子得到较大提高。当烧结压力为2 GPa时,所得样品在700 K时其品质因子达到0.59,相比未经烧结的常压熔融样品提高了150%。

     

  • Disalvo F J. Thermoelectric cooling and power generation [J]. Science, 1999, 285(5428): 703-706.
    Bennett G L. CRC handbook of thermoelectrics [Z]. New York: CRC Press, 1995: 515-537.
    Zhu P W, Jia X P, Chen H Y, et al. PbTe syntheses by high-pressure and high-temperature approach [J]. Chinese Journal of High Pressure Physics, 2002, 16(3): 183-187. (in Chinese)
    朱品文, 贾晓鹏, 陈海勇, 等. PbTe 的高温高压合成 [J]. 高压物理学报, 2002, 16(3): 183-187.
    Ovsyannikov S V, Shchennikov V V. Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe [J]. Appl Phys Lett 2007, 90: 122103.
    Su T C, Jia X P, Ma H A, et al. Thermoelectric properties of nonstoichiometric PbTe prepared by HPHT [J]. J Alloy Compd, 2009, 468(1-2): 410-413.
    Dong Y, McGuire M A, Malik A S, et al. Transport properties of undoped and Br-doped PbTe sintered at high-temperature and pressure 4. 0 GPa [J]. J Solid State Chem, 2009, 182(10): 2602-2607.
    Dong Y, Malik A, DiSalvo F J. Thermoelectric properties of HPHT sintered In-doped Pb0. 5Sn0. 5Te [J]. J Solid State Chem, 2010, 183(8): 1817-1822.
    Dong Y, Malik A, DiSalvo F J. High power factor of HPHT-sintered GeTe-AgSbTe2 alloys [J]. J Electron Mater, 2011, 40(1): 17-24.
    McGuire M A, Malik A, DiSalvo F J. Effects of high-pressure high-temperature treatment on the thermoelectric properties of PbTe [J]. J Alloy Compd, 2008, 460(1-2): 8-12.
    Godwal B K, Jayaraman A, Meenakshi S, et al. Electronic topological and structural transition in AuIn2 under pressure [J]. Phys Rev B, 1998, 57(2): 773-776.
    Ravich Y I, Efimova B A, Smirnov I A. Semiconducting lead chalcogenides [Z]. New York: Plenum Press, 1970: 309-312.
    Zhu P W, Jia X, Chen H Y. Giant improved thermoelectric properties in PbTe by HPHT at room temperature [J]. Chem Phys Lett, 2002, 359(1-2): 89-94.
    Uemura K, Nishida I A. Thermoelectric semiconductors and their applications [Z]. Tokyo: Nikkan Kogyo Press, 1988: 145. (in Japanese).
    Su T C, Zhu P W, Ma H A, et al. Thermoelectric properties of N-PbTe doped with Sb2Te3 prepared by high-pressure and high-temperature [J]. Chinese Journal of High Pressure Physics, 2007, 21(1): 55-58. (in Chinese)
    宿太超, 朱品文, 马红安, 等. 高温高压下掺杂N型PbTe的热电性能 [J]. 高压物理学报, 2007, 21(1): 55-58.
    Mei C, Li Y, Li G D, et al. The effect of high-pressure sintering procession the microstructure and thermoelectric properties of CoSb3 [J]. J Electron Mater, 2009, 38(7): 1194-1199.
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出版历程
  • 收稿日期:  2011-07-08
  • 修回日期:  2011-11-18
  • 发布日期:  2012-04-15

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