Zn2SnO4纳米线高压下的相变研究

沈希 沈俊 游淑洁 杨留响 唐玲云 李延春 刘景 杨华 周维亚 靳常青

沈希, 沈俊, 游淑洁, 杨留响, 唐玲云, 李延春, 刘景, 杨华, 周维亚, 靳常青, 等. Zn2SnO4纳米线高压下的相变研究[J]. 高压物理学报, 2009, 23(5): 327-331 . doi: 10.11858/gywlxb.2009.05.002
引用本文: 沈希, 沈俊, 游淑洁, 杨留响, 唐玲云, 李延春, 刘景, 杨华, 周维亚, 靳常青, 等. Zn2SnO4纳米线高压下的相变研究[J]. 高压物理学报, 2009, 23(5): 327-331 . doi: 10.11858/gywlxb.2009.05.002
SHEN Xi, SHEN Jun, YOU Shu-Jie, YANG Liu-Xiang, TANG Ling-Yun, LI Yan-Chun, LIU Jing, YANG Hua, ZHOU Wei-Ya, JIN Chang-Qing, et al.. Phase Transition of Zn2SnO4 Nanowires under High Pressure[J]. Chinese Journal of High Pressure Physics, 2009, 23(5): 327-331 . doi: 10.11858/gywlxb.2009.05.002
Citation: SHEN Xi, SHEN Jun, YOU Shu-Jie, YANG Liu-Xiang, TANG Ling-Yun, LI Yan-Chun, LIU Jing, YANG Hua, ZHOU Wei-Ya, JIN Chang-Qing, et al.. Phase Transition of Zn2SnO4 Nanowires under High Pressure[J]. Chinese Journal of High Pressure Physics, 2009, 23(5): 327-331 . doi: 10.11858/gywlxb.2009.05.002

Zn2SnO4纳米线高压下的相变研究

doi: 10.11858/gywlxb.2009.05.002
详细信息
    通讯作者:

    沈希

Phase Transition of Zn2SnO4 Nanowires under High Pressure

More Information
    Corresponding author: SHEN Xi
  • 摘要: 利用金刚石对顶压砧(DAC)对具有反尖晶石结构的透明导体氧化物Zn2SnO4(ZTO)纳米线进行了原位高压同步辐射角散X射线衍射(ADXRD)研究。结果发现:在压力为12.9 GPa附近,晶体的对称性降低,并发生晶体结构相变,产生中间过渡相;当压力为32.7 GPa时,发生高压相变,形成高压相。在样品加压前后,纳米线的形貌发生了很大的变化。通过Birch-Murnaghan方程,拟合得到B0=4时的体弹模量B0 =(168.69.7) GPa。

     

  • Wang L S, Zhang X Z, Liao X, et al. A Simple Method to Synthesize Single-Crystalline Zn2SnO4 (ZTO) Nanowires and Their Photoluminescence Properties [J]. Nanotech, 2005, 16(12): 2928-2931.
    Segev D, Wei S. Structure-Derived Electronic and Optical Properties of Transparent Conducting Oxides [J]. Phys Rev B, 2005, 71(12): 125129.
    Nomura K, Ohta H, Ueda K, et al. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor [J]. Science, 2003, 300(5623): 1269-1272.
    Granqvist C G, Hultaker A. Transparent and Conducting ITO Films: New Developments and Applications [J]. Thin Solid Films, 2002, 411(1): 1-5.
    Gao S, Zhao Y, Gou P P, et al. Preparation of CuAlO2 Nanocrystalline Transparent Thin Films with High Conductivity [J]. Nanotech, 2003, 14(5): 538-541.
    Huang M H, Mao S, Feick H, et al. Room-Temperature Ultraviolet Nanowire Nanolasers [J]. Science, 2001, 292(5523): 1897-1899.
    Pan Z W, Dai Z R, Wang Z L. Nanobelts of Semiconducting Oxides [J]. Science, 2001, 291(5510): 1947-1949.
    Wang S M, Yang Z S, Lu M K, et al. Coprecipitation Synthesis of Hollow Zn2SnO4 Spheres [J]. Materials Letters, 2007, 61(14-15): 3005-3008.
    Young D L, Williamson D L, Coutts T J. Structural Characterization of Zinc Stannate Thin Films [J]. J Appl Phys, 2002, 91(3): 1464-1471.
    Wei S, Zhang S B. First-Principles Study of Cation Distribution in Eighteen Closed-Shell AⅡB2ⅢO4 and AⅣB2ⅡO4 Spinel Oxides [J]. Phys Rev B, 2001, 63(4): 045112.
    Wang J X, Xie S S, Yuan H J, et al. Synthesis, Structure, and Photoluminescence of Zn2SnO4 Single Crystal Nanobelts and Nanorings [J]. Solid State Commun, 2004, 131(7): 435-440.
    He R R, Law M, Fan R, et al. Functional Bimorph Composite Nanotapes [J]. Nano Lett, 2002, 2(10): 1109-1112.
    Yu R C, Zhao P, Li F Y, et al. Effect of Ba Content on Initial Magnetization of Sr2-xBaxFeMoO6 and the Structural Stability under High Pressure [J]. Phys Rev B, 2004, 69(21): 214405.
    Liu J, Zhao J, Che R Z, et al. Progress in High Pressure EDXD System and Research at Beijing Synchrotron Radiation Facility [J]. Chinese Science Bulletin, 2000, 45(18): 1659-1662.
    Mo S D, Ching W Y. Electronic Structure of Normal, Inverse, and Partially Inverse Spinels in the MgAl2O4 System [J]. Phys Rev B, 1996, 54(23): 16555-16561.
    Barth T F W, Posnjak E. Spinel Structures with and without Variate Atom Equipoints [J]. Z Kristallogr Kristallgeom Kristallphys Kristallchem, 1932, 82(5-6): 325-341.
  • 加载中
计量
  • 文章访问数:  7938
  • HTML全文浏览量:  312
  • PDF下载量:  704
出版历程
  • 收稿日期:  2009-03-25
  • 修回日期:  2009-03-25
  • 发布日期:  2009-10-15

目录

    /

    返回文章
    返回