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摘要: 采用直流辉光等离子体化学气相沉积金刚石厚膜,利用氢的微波等离子体对抛光的金刚石厚膜截面进行刻蚀,用扫描电子显微镜、激光拉曼光谱仪研究了金刚石厚膜的微结构及杂质、缺陷的分布。结果表明:杂质、空洞主要富集在晶界处;在金刚石膜的生长过程中,随着甲烷流量的增加,晶界密度、空洞、晶粒内部缺陷、杂质含量逐渐增加,晶界的排列从以纵向为主过渡到网状结构。Abstract: The polished cross-section of the diamond thick films deposited by direct current glow discharge plasma was etched by hydrogen microwave plasma. The grain boundaries and the defects in the films have been directly observed using scanning electron microscopy (SEM). It is found that the non-diamond impurities, and the holes normally appear along the grain boundaries; and at high (low) methane flow rate corresponding to the constant hydrogen flow rate, the films consist of high (low) density of grain boundaries with netted texture.
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Key words:
- diamond thick film /
- plasma etching /
- growth characteristics /
- grain boundary
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Coe S E, Sussmann R S. Optical, Thermal and Mechanical Properties of CVD Diamond [J]. Diamond and Related Materials, 2000, 9: 1726. Lizuka M, Ikawa H, Fukunaga O. Nucleation and Growth of Diamond Using Ni-Ti, Ni-Nb and Fe-B Alloy as Solvents [J]. Diamond and Related Materials, 1996, 5: 38. McCauley T S, Vohra Y K. Homoepitaxial Diamond Film Deposition on a Brilliant Cut Diamond Anvil [J]. Appl Phys Lett, 1995, 66(12): 1486. Schreck M, Roll H, Stritzker B. Diamond/Ir/SrTiO3: A Material Combination for Improved Heteroepitaxial Diamond Films [J]. Appl Phys Lett, 1999, 74(5): 650. Janischowsky K, Stammler M, Ley L. High Quality Textured Growth of Oriented Diamond Thin Films on Si (100) in a Hot Filament-CVD System [J]. Diamond and Related Materials, 1999, 8: 179. Huang B R, Wu C H, Ke W Z. Surface Analysis of Boron-Doped Polycrystalline Diamond Films Deposited by a Microwave Plasma Chemical Vapor Deposition System [J]. Materials Chemistry and Physics, 1999, 59: 143. Ross M C. Micro-Raman Fingerprint of Grain Boundary in [100] Oriented Diamond Films: Stress Distribution and Diamond Phases [J]. Appl Phys Lett, 1998, 73(9): 1203. Conte G, Rossi M C, Salvatori S, et al. Grain Boundary Transport in X-Ray Irradiated Polycrystalline Diamond [J]. J Appl Phys, 2003, 93(10): 6078. Sun H P, Yu S, Jiang Z G, et al. Twin-Step-Related Growth Phenomena of Thick Diamond Film [J]. Diamond and Related Materials, 1996, 5: 1308. Takayuki Toyama, Yasuo Koide, Masanori Murakami. Field Emission of Polycrystalline Diamond Films Grown by Microwave-Plasma Chemical Vapor Deposition. Ⅰ. Effects of Surface Morphology of Diamond [J]. Diamond and Related Materials, 2002, 11: 1897. Young T F, Liu T S, Jung D J. Microstructural and Electrical Studies of Nitrogen Doped Diamond Thin Films Grown by Microwave Plasma CVD [J]. Surface Coatings Technology, 2006, 200: 3145. Ichinose H, Nakanose M. Atomic and Electronic Structure of Diamond Grain Boundaries Analyzed [J]. Thin Solid Films, 1998, 319: 87. Worner E, Pleuler E, Wild C, et al. Thermal and Optical Properties of High Purity CVD-Diamond Discs Doped [J]. Diamond and Related Materials, 2003, 12: 744. Wolter S D, Borca-Tasciuc D -A, Chen G, et al. Thermal Conductivity of Epitaxially Textured Diamond Films [J]. Diamond and Related Materials, 2003, 12: 61. Steinbach D, Fioter A, Guttler H, et al. Microscopic Measurements of the Electrical Properties of Highly Oriented B-Doped Diamond Films: Influence of Grain Boundaries [J]. Diamond and Related Materials, 1999, 8: 273. Bai Y Z, Jin Z S, Jiang Z G, et al. Influence of Hot Cathode Glow Discharge on the Deposition of Diamond Films [J]. Chinese Journal of Materials Research, 2003, 17(5): 537. (in Chinese) 白亦真, 金曾孙, 姜志刚, 等. 热阴极辉光放电对金刚石膜沉积的影响 [J]. 材料研究学报, 2003, 17(5): 537. Jin Z S, Jiang Z G, Bai Y Z, et al. Synthesis of Thick Diamond Film by Direct Current Hot-Cathode Plasma Chemical Vapor Deposition [J]. Chinese Physics Letters, 2002, 19(9): 1374. Laikhtman A, Hoffman A. Enhancement of Secondary Electron Emission by Annealing and Microwavehydrogen Plasma Treatment of Ion-Beam-Damaged Diamond Films [J]. J Appl Phys, 2002, 19(4): 2481. Stoner B R, Tessmer G J, Dreifus D L. Bias Assisted Etching of Diamond in a Conventional Chemical Vapor Deposition Reactor [J]. Appl Phys Lett, 1993, 62(15): 1803.
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