含电子影响的冲击温度计算

冉宪文 汤文辉 谭华 戴诚达

冉宪文, 汤文辉, 谭华, 戴诚达. 含电子影响的冲击温度计算[J]. 高压物理学报, 2006, 20(2): 153-156 . doi: 10.11858/gywlxb.2006.02.007
引用本文: 冉宪文, 汤文辉, 谭华, 戴诚达. 含电子影响的冲击温度计算[J]. 高压物理学报, 2006, 20(2): 153-156 . doi: 10.11858/gywlxb.2006.02.007
RAN Xian-Wen, TANG Wen-Hui, TAN Hua, DAI Cheng-Da. Calculation of Shock Temperature by Considering Electronic Contribution[J]. Chinese Journal of High Pressure Physics, 2006, 20(2): 153-156 . doi: 10.11858/gywlxb.2006.02.007
Citation: RAN Xian-Wen, TANG Wen-Hui, TAN Hua, DAI Cheng-Da. Calculation of Shock Temperature by Considering Electronic Contribution[J]. Chinese Journal of High Pressure Physics, 2006, 20(2): 153-156 . doi: 10.11858/gywlxb.2006.02.007

含电子影响的冲击温度计算

doi: 10.11858/gywlxb.2006.02.007
详细信息
    通讯作者:

    冉宪文

Calculation of Shock Temperature by Considering Electronic Contribution

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    Corresponding author: RAN Xian-Wen
  • 摘要: 在原有的冲击温度计算方法的基础上提出了一种新的计算方法,它既考虑了电子对冲击温度的影响,也有效的回避了物质零温物态方程计算的困难。通过对金属铝和铜的计算,结果与实验数据吻合得很好,所给出的铝和铜的冲击熔化点分别为(125.5 GPa,4 705 K)和(231 GPa,5 369 K),与目前铝和铜的冲击熔化点的实验数据吻合得非常好。

     

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出版历程
  • 收稿日期:  2005-04-18
  • 修回日期:  2005-05-23
  • 发布日期:  2006-06-05

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