InAs晶体二维自旋磁极化子自陷能的磁温效应

李子军; 李岗

doi:10.11858/gywlxb.2005.01.009

InAs晶体二维自旋磁极化子自陷能的磁温效应

doi: 10.11858/gywlxb.2005.01.009

李子军,
李岗

烟台大学光电学院，山东烟台 264005

详细信息

通讯作者:
李子军

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出版历程
- 收稿日期: 2004-01-06
- 修回日期: 2004-05-08
- 发布日期: 2005-03-05

Magnetic Field and Temperature Effects on the Self-Trapping Energy of the 2-D Spin Magnetopolaron in an InAs Crystal

LI Zi-Jun,
LI Gang

Institute of Science and Technology for Opto-Electronic Information, Yantai University, Yantai 264005, China

More Information

Corresponding author: LI Zi-Jun

摘要

摘要: 在同时考虑磁场和高温高压的情况下，应用么正变换和线性组合算符法，研究了电子自旋对弱耦合二维磁极化子自陷能的影响。对InAs半导体所作的数值计算结果表明，不同方向的电子自旋使弱耦合二维磁极化子的自陷能分裂为二。分裂的程度随磁场的加强而加剧。随着磁场或温度的增加，磁极化子的自陷能减小而电子自旋能量与磁极化子自陷能之比增大。当磁场足够强或温度足够高时，电子自旋能量与磁极化子自陷能之比是很大的。
- 弱耦合 /
- 自旋 /
- 自陷能 /
- 磁场效应 /
- 高温高压效应
Abstract: Under the circumstances of magnetic field, high pressure and high temperature, the influence of the electron-spin on the self-trapping energy of the weak-coupling 2-D magnetopolaron was studied by using unitary transformations and the linear combination operator method. Numerical calculation, with InAs semiconductor as an example, illustrated that the self-trapping energy level of the weak-coupling 2-D magnetopolaron was divided into two by the electron-spin of different direction. The split self-trapping energy level was more marked with increasing magnetic field. The self-trapping energy of the magnetopolaron decreased and the ratio of electronspin energy to the self-trapping energy of the magnetopolaron increased with increasing magnetic field or temperature. The ratio of electron-spin energy to the self-trapping energy of the magnetopolaron was very large, when the magnetic field performed sufficient strong and the temperature performed sufficient high.
- weak-coupling /
- spin /
- self-tapping energy /
- magnetic field dependence /
- high pressure high temperature dependence

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参考文献(20)

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