含氢添加剂对合成cBN的影响及腔体温度分布

卜雨洲; 郭伟力; 马红安; 陈立学; 贾晓鹏

doi:10.11858/gywlxb.2005.01.001

含氢添加剂对合成cBN的影响及腔体温度分布

doi: 10.11858/gywlxb.2005.01.001

1.
吉林大学超硬材料国家重点实验室，吉林长春 130012；
2.
河南理工大学，河南焦作 454000

详细信息

通讯作者:
贾晓鹏

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出版历程
- 收稿日期: 2004-02-24
- 修回日期: 2004-03-30
- 发布日期: 2005-03-05

Influence of H Additive on the Synthesis of cBN and Temperature-Distribution in the Anvil

1.
National Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;
2.
Henan Polytechnic University, Jiaozuo 454000, China

More Information

Corresponding author: JIA Xiao-Peng

摘要

摘要: 通过对Li基触媒下立方氮化硼的高温高压合成实验结果的分析，研究了在Li基触媒作为主要触媒及氢化物作为添加剂的环境下，立方氮化硼的生长情况。同时由合成后样品中立方氮化硼的生成区域对V型生长区温度梯度分布进行了分析讨论。
- 高温高压 /
- 立方氮化硼 /
- V型区
Abstract: The influence of H in using Li3N as catalyst on the synthesis of cBN under high-temperature and high-pressure has been investigated. From the observation of cBN crystals growth within the sample capsule, the temperature gradient distribution has been discussed.
- high-temperature and high-pressure /
- cBN /
- V-area

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参考文献(9)

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