金刚石薄膜负偏压形核的边缘效应

王传新 汪建华 马志斌 满卫东 王升高 康志成

王传新, 汪建华, 马志斌, 满卫东, 王升高, 康志成. 金刚石薄膜负偏压形核的边缘效应[J]. 高压物理学报, 2003, 17(2): 145-149 . doi: 10.11858/gywlxb.2003.02.012
引用本文: 王传新, 汪建华, 马志斌, 满卫东, 王升高, 康志成. 金刚石薄膜负偏压形核的边缘效应[J]. 高压物理学报, 2003, 17(2): 145-149 . doi: 10.11858/gywlxb.2003.02.012
WANG Chuan-Xin, WANG Jian-Hua, MA Zhi-Bin, MAN Wei-Dong, WANG Sheng-Gao, KANG Zhi-Cheng. Brim Effect of Negative Bias-Enhanced Nucleation of Diamond Film on Silicon Substrate[J]. Chinese Journal of High Pressure Physics, 2003, 17(2): 145-149 . doi: 10.11858/gywlxb.2003.02.012
Citation: WANG Chuan-Xin, WANG Jian-Hua, MA Zhi-Bin, MAN Wei-Dong, WANG Sheng-Gao, KANG Zhi-Cheng. Brim Effect of Negative Bias-Enhanced Nucleation of Diamond Film on Silicon Substrate[J]. Chinese Journal of High Pressure Physics, 2003, 17(2): 145-149 . doi: 10.11858/gywlxb.2003.02.012

金刚石薄膜负偏压形核的边缘效应

doi: 10.11858/gywlxb.2003.02.012
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    通讯作者:

    王传新

Brim Effect of Negative Bias-Enhanced Nucleation of Diamond Film on Silicon Substrate

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    Corresponding author: WANG Chuan-Xin
  • 摘要: 在微波等离子体化学气相沉积装置中,研究了金刚石薄膜在Si (100)面上的负偏压形核行为,结果表明,偏压大小对金刚石的形核均匀性有显著影响,而甲烷浓度主要影响形核时间,对金刚石的最大核密度影响不大。在硅片尺寸小于钼支撑架时,形核行为存在明显的边缘效应,即在偏压值低于-150 V时,硅片边缘金刚石核密度急剧降低,远低于硅片中央;在甲烷浓度比较低时,硅片边缘核密度要高于中间。研究表明,造成这种现象的主要原因是硅片下的钼支撑架发射电子所致,过量的原子H对金刚石的形核是不利的。

     

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出版历程
  • 收稿日期:  2002-09-10
  • 修回日期:  2002-11-26
  • 发布日期:  2003-06-05

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