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摘要: 在高温高压条件下,实验成功实现了氮化镓的烧结。首次将氨压应用到陶瓷体的烧结中,解决了GaN的分解、原料中残余的氧化物等问题,提高了烧结体的结晶度。研究了在氨压条件下温度对烧结致密度的影响。Abstract: GaN ceramics have been obtained under high temperature and high pressure. The use of a pressure of NH3 changed the situations of the decomposition of GaN during sintering, and the remainder of Ga2O3 in the materials impoved the crystallization of GaN as well. The relationship between the density ratio of sintered bodies and temperature has been studied by SEM and Archimedes method.
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Key words:
- GaN /
- high temperature and high pressure /
- ceramic
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Fasol G. Room-Temperature Blue Gallium Nitride Laser Diode [J]. Science, 1996, 272: 1751. Ponce F A, Bour D P. Nitride-Based Semiconductors for Blue and Green Light-Emitting Devices [J]. Nature, 1997, 386: 351. Nakamura S, Mukai T, Senoh M. Candela-Class High-Brightness ingan/Algan Double-Heterostructure Blue-Ligh Emitting Diodes [J]. Appl Phys Lett, 1994, 64: 1687. Xie Y, Qian Y, Wang W, et al. A Benzene-Thermal Synthetic Route to Nanocrystalline GaN [J]. Science, 1996, 272: 1926. Han W, Fan S, Li Q, et al. Synthesis of Gallium Nitride Nanorodes through a Carbon Nanotube-Confined Reaction [J]. Science, 1997, 277: 1287. Nakamura S, Harada Y, Seno M. Novel Metalorganic Chemical Vapor Deposition System for GaN Growth [J]. Appl Phys Lett, 1991, 58: 2021. Strite S, Lin M E, Morkoc H. Progress and Prospects for GaN and the Ⅲ-Ⅴ Nitride Semiconductors [J]. Thin Solid Films, 1993, 231: 197. Yamane H, Kajiwara T, Sckiguchi T, et al. Zinc-Blende-Type Cubic GaN Single Crystals Prepared in a Potassium Flux [J]. Jpn J Appl Phys, 2000, 39: L146. Karpinski J, Jun J, Porowski S. Equilibrium Pressure of N2 over GaN and High Pressure Solution Growth of GaN [J]. J Cryst Growth, 1986, 66: 1. Perlin P, Gorczyca I, Christersen N E, et al. Pressure Studies of Gallium Nitride: Crystal Growth and Fundametal Electronic Properties [J]. Phys Rev B, 1992, 45: 13307. Cui Shuojing, Zhao Tinhe, Yan Xuewei, et al. Polycrystalline Jadeite Gem [J]. Chinese Journal of High Pressure Physics, 1994, 8(2): 99. (in Chinese)崔硕景, 赵廷河, 闫学伟, 等. 人造聚晶翡翠宝石 [J]. 高压物理学报, 1994, 8(2): 99. Xia H, Xia Q, Ruoff A L. High-Pressure Structure of Gallium Nitride: Wutzite-to-Rocksalt Phase Transition [J]. Phys Rev B, 1993, 47: 12925. Anthong R. West Solid State Chemistry and Its Applications [M]. New York: John WileySons, 1984. 445. Liu Xiao-yang, Zhao Xu-dong, Hou Wei-min, et al. Transformation of Boron Oxide B2O3 under High Pressure and High Temperature [J]. Chinese Journal of High Pressure Physics, 1995, 9(3): 213. (in Chinese) 刘晓炀, 赵旭东, 侯为民, 等. 高温高压条件下三氧化二硼相变过程的研究 [J]. 高压物理学报, 1995, 9(3): 213. Li Shao-chun, Zhu Jia-lin, Yu Ri-cheng, et al. High Pressure Synthesis of Bulk MgB2 Superconductor [J]. Chinese Journal of High Pressure Physics, 2001, 15(3): 226. (in Chinese) 李绍春, 朱嘉林, 禹日成, 等. MgB2超导体块材的高压合成 [J]. 高压物理学报, 2001, 15(3): 226. ZHOU Zhen-jun, LI Gong, YANG Zheng-fang, et al. The Effect of cBN Inclusions on the Densification and Microstructure of Fine-Grained Polycrystalline Diamond Compact [J]. Chinese Journal of High Pressure Physics, 2001, 15(3): 229. (in Chinese) 周振君, 李工, 杨正方, 等. 掺杂立方氮化硼对金刚石聚晶致密化和显微结构的影响 [J]. 高压物理学报, 2001, 15(3): 229. Yamane H, Shimada M, Endo T. Polarity of GaN Single Crystals Prepared with Na Flux [J]. Jpn J Appl Phys, 1998, 37: 3436.
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