镀膜锰铜压阻计结晶问题研究

施尚春; 董石; 黄跃; 周鸿仁

doi:10.11858/gywlxb.2001.04.003

镀膜锰铜压阻计结晶问题研究

doi: 10.11858/gywlxb.2001.04.003

施尚春^1,2,,
董石^1,2,
黄跃^1,2,
周鸿仁³

1.
中物院流体物理研究所冲击波物理与爆轰物理实验室，四川绵阳 621900；
2.
四川大学应用物理研究所，四川成都 610065；
3.
成都电子科技大学，四川成都 610034

详细信息

通讯作者:
施尚春

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出版历程
- 收稿日期: 2000-12-29
- 修回日期: 2001-05-17
- 发布日期: 2001-12-05

Crystallization of Plating-Manganin Piezoresistance Gauges

1.
Laboratory for Shock Wave and Detonation Physics Research, Institute of Fluid Physics, CAEP, Mianyang 621900, China;
2.
Institute of Applied Physics, Sichuan University, Chengdu 610065, China;
3.
Chengdu University of Electronic Science and Technology, Chengdu 610034, China

More Information

Corresponding author: SHI Shang-Chun

摘要

摘要: 用磁控溅射低温沉积镀膜技术制做锰铜薄膜，能够保持薄膜中锰、铜、镍成份的相对稳定和锰铜合金正六面三元固溶体金相结构的特性。但是，锰铜镀膜的结晶晶粒度与工业生产的锰铜合金还有较大差别，宏观物理量表现为：电阻率偏高，冲击压阻系数偏小。真空加热到673 K对锰铜镀膜进行热处理1 h，可以使晶粒尺寸平均增加约20%，电阻率减小一半，0～80 GPa冲击波加载动态标定实验显示：压阻系数增加到2.0～2.6 （10-2 GPa-1），接近轧制薄箔锰铜计的水平。
- 镀膜锰铜计 /
- 晶粒度 /
- 电阻率 /
- 压阻系数
Abstract: Magnetically controlled cathod plasma sputtering technique was used to manufacture the plating-manganin film. Although the film was the same metal-construction feature as manganin-alloy does, it has smaller crystalloid-size, twice resistivity and less piezoresistance coefficient than the alloy. However, the average crystal size increases by about 20%, and the resistivity decreases by 50%. The piezoresistance coefficient of the film annealed under 673 K in vacuum increased to 2.0～2.6 (10-2 GPa-1) in 0～80 GPa.
- plating manganin gauge /
- crystallization /
- resistivity /
- piezoresistance coefficient

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参考文献(4)

Harry Vantine, John Chan, Leroy Erickson, et al. Precision Stress Measurements in Severe Shock-Wave Environments with Low-Impedance Manganin Gauges [J]. Rev Sci Instrum, 1980, 51(1): 116-122.

Bosca G, David J, Allay L, et al. Piezoresistivite du Manganin et de I' ytterbium Deposes par Pulverisation Cathodique [J]. Rev Phys Appl, 1981, 16: 387-395.

施尚春, 张清福, 罗教明, 等. 镀膜锰铜计的压阻性能研究[J]. 高压物理学报, 1992, 6(1) : 68-74.

章冠人. 锰铜压力计的灵敏度 [J]. 高压物理学报, 1988, 2(3): 193-201.

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