纳米晶Si在高压下的电学性质与金属化相变

Electrical Properties and Metallic Transitions in Nanocrystals Si at High Pressure

1.
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
2.
International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110015, China;
3.
Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4.
Beijing University of Aeronautics and Astronautics, Beijing 100083, China;
5.
South China Normal University, Guangzhou 510631, China

摘要: 在金刚石压砧装置上，采用电阻和电容测量方法，研究了粒径为15~18 nm和80 nm的纳米晶Si在室温下、24 GPa内的电阻、电容与压力的关系。实验结果表明，它们分别在19~17 GPa和14 GPa左右发生了金属化相变。
- 纳米晶Si /
- 电阻 /
- 电容 /
- 金属化相变
Abstract: The resistance pressure and capacitance-pressure relationships for nanocrystals Si with grain sizes of 15～18 nm and 80 nm at room temperature and up to 24 GPa have been studied in a diamond anvil cell using resistance and capacitance measurements established by us. The experimental results show that they undergo a metallic transition at about 19～17 GPa and 14 GPa, respectively.
- Si nanocrystals /
- resistance /
- capacitance /
- metallic transition