用过剩压法生长金刚石过程石墨再结晶现象的研究

罗湘捷; 罗伯诚; 罗俊义; 陈世途; 丁立业

doi:10.11858/gywlxb.1996.02.005

用过剩压法生长金刚石过程石墨再结晶现象的研究

doi: 10.11858/gywlxb.1996.02.005

1.
四川联合大学高温高压物理研究所，四川成都 610065；
2.
四川联合大学材料科学技术研究所，四川成都 610065；
3.
北京钢铁研究总院，北京 100081；
4.
四川联合大学理化分析测试中心，四川成都 610065

详细信息

通讯作者:
罗湘捷

计量
- 文章访问数: 7244
- HTML全文浏览量: 478
- PDF下载量: 728
出版历程
- 收稿日期: 1996-02-02
- 修回日期: 1996-02-02
- 发布日期: 1996-06-05

Studies on the Recrystallization of Graphite during the Process of Diamond Growth under Excess Pressure

1.
Institute of High Temperature High Pressure Physics, Sichuan Union University, Chengdu 610065, China;
2.
Institute of Materials Science and Technology, Sichuan Union University, Chengdu 610065, China;
3.
Centre Iron and Steel Research Institute, Beijing 100081, China;
4.
Centre of Analysis and Measurement for Physics and Chemistry, Sichuan Union University, Chengdu 610065, China

More Information

Corresponding author: LUO Xiang-Jie

摘要

摘要: 描述了在过剩压驱动下金刚石晶种外延生过程中，大量伴生的石墨再结晶现象。再结晶石墨抑制了金刚石的自发成核；它们分布于合成腔触媒金属的低温区，结晶数量多，晶粒片状分层，尺寸大，但出现乱层晶体结构；同时产生一定数量的无定形碳。分析认为，这与长时间的低过剩压驱动，触媒金属内有足够的碳源供给，并具备在高温高压下石墨充分结晶但又达不到完全石墨化条件有关。还讨论了在低过剩压驱动下，促进金刚石晶体外延生长的碳源可能是活化的碳原子，而不是具有乱层结构特征的再结晶石墨。
- 低过剩压 /
- 再结晶石墨 /
- 乱层结构 /
- 无定形碳
Abstract: Characteristics of co-growing of recrystallized graphite have been reported during the epitaxial growth process of diamond seed under excess pressure. Spontaneous diamond nucleation was inhibited by recrystallized graphite grains which abundantly distributed in lower temperature zone of metal solvent discs. Numerous recrystallized graphite grains, which were in strata structure but disordered each other, occurred with some amorphous carbon. Those phenomena have been considered to be related to the condition under long time lower excess pressure: plentiful carbon in metal solvent discs, high temperature and high pressure are suitable for well recrystallization but insufficient for graphitization. It has also been discussed that the active carbon atoms rather than recrystallized graphite grains might play as a source of carbon for epitaxial growth of diamond under lower excess pressure.
- lower excess pressure /
- recrystallized graphite /
- amorphous carbon /
- disordered structure

HTML全文

参考文献(10)

Wakatsuki M, Takano K J. In: Managhanani M H, Shono Y, eds. High Pressure Research in Mineral Physics. Tokyo: Terra Scientific Publishing Co, 1987: 203-207.

Wang Y, Takanabe R, Kagi H, et al. In: Saito S, Fukunaga N, Kamo M, et al. Advances in New Diamond Science and Technology. Tokyo: MYV, 1994: 521-524.

罗湘捷, 丁立业, 等. 见: 国家高技术新材料领域专家委员会编. 先进材料进展. 北京: 科学出版社, 1995: 186-190.

东京天文台. 理科年表. 东京: 东京天文台, 1986.

洪时明, 罗湘捷, 王永国, 等. 高压物理学报, 1989, 3(2): 159.

于鸿昌, 王光祖. 磨料磨具与磨削, 1983, (4): 30-40.

Strong H M, Hannema R E. J Chem Phys, 1967, 46(9): 3668.

丁立业, 若槻雅男. 应用物理(日文), 1988, 57(7): 1071-1077.

刘光照. 物理学报, 1979, 28(3): 334-340.

贺义兴, 郝兆印, 王德荣, 等. 高压物理学报, 1992, 6(3): 161-168.

施引文献

资源附件(0)

访问统计