几种半导体在高压下的金属化相变

Metallic Transitions in Several Kinds of Semiconductors at High Pressure

1.
Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;
2.
International Centre for Materials Physics, Chinese Academy of Sciences, Shenyang 110015, China;
3.
Department of Physics, Montana State University, Bozeman MT 59717, USA

摘要: 在金刚石压砧装置上，采用我们建立的电阻测量方法，研究了半导体InP0.97As0.03、InP0.5As0.5、Ga0.76In0.24As和Ga0.24In0.76As在室温下、16 GPa内的电阻与压力的关系。工作中，对测量技术进行了一些改进，采用微机进行测量控制和数据记录。实验结果表明，这些样品在测量的压力范围内，均发生了金属化相变。它们的相变压力分别为：10.3、9.7、13.5~14.6和10~10.4 GPa左右。这些实验结果在过去发表的文章中未见报导过。
- 半导体 /
- 金属化相变 /
- 电阻测量
Abstract: Resistance-pressure (R-p) relationships in InP0.97As0.03, InP0.5As0.5, Ga0.76In0.24As and Ga0.24In0.76As at room temperature at high pressure have been studied in a diamond anvil cell using resistance measurement. Experimental results indicate that these samples all undergo metallic transitions in the measured pressure range, and their transition pressures are about 10.3, 9.7, 13.5~14.6 and 10~10.4 GPa, respectively. Some improvements were made on the measurement techniques.
- semiconductor /
- metallic transition /
- resistance measurement