[1] |
Wentorf R H. Sythesis of the Cubic Form of Boron Nitride [J]. J Chem phys, 1961, 34: 809. |
[2] |
Mishima O, Tanaka J, Yamaoka S, et al. High-Temperature Cubic Boron Nitride P-N Junction Diode Made at High Pressure [J]. Science, 1987, 238: 181-183. |
[3] |
Tomikawa T, Nishibayashi Y, Shikata S. P-N Junction Diode by B-Doped Diamond Heteroepitaxially Grown on Si-Doped c-BN [J]. Diamond and Relat Mater, 1994, 3: 1398. |
[4] |
Zhang T Ch, Wang Ch X, Gao Ch X. Cubic Boron Nitride Crystal-Diamond Film Heterojunction P-N Diode [J]. Chinese Journal of High Pressure Physics, 1999, 13(3): 169. (in Chinese) |
[5] |
张铁臣, 王成新, 高春晓. 立方氮化硼单晶-金刚石膜异质P-N结 [J]. 高压物理学报, 1999, 13(3): 169. |
[6] |
Bello I, Chong Y M, Leung K M, et al. Cubic Boron Nitride Films for Industrial Applications [J]. Diamond Relat Mater, 2005, 14: 1784-1790. |
[7] |
Sato T, Hiraok H, Endo T. Effect of Oxygen on the Growth of Cubic Boron Nitride Using Mg3N2 as Catalyst [J]. J Materials Sci, 1981, 16: 2227. |
[8] |
Singal S K, Park J K. Synthesis of Cubic Boron Nitride from Amorphous Boron Nitride Containing Oxide Impurity Using Mg-Al Alloy Catalyst Solvent [J]. J Crystal Growth, 2004, 260: 217-557. |