The Experimental Research of Heat Resistance of Octahedral Boron-Skinned Diamond

This paper presents the experiment results on the boron atom permeated into the surface of natural octahedral diamond to form boron skin with ion implantation method. Analysis was done to find whether its heat resistance is the best. The XPS analysis and TGA analysis were carried out on octahedral B-skinned diamond with four energies (2.0, 5.5, 7.0 and 8.5 keV). XPS analysis showed that B-skin was formed on the surface of diamond. TGA analysis proved that the onset oxidation temperature of octahedral B-skinned diamond is over 1 000 ℃. Results show that {111} plane of octahedral B-skinned diamond has the best anti-oxidization resistance, and this property is not dependent on the depth of B atoms implanted into the diamond.