磷掺杂硅锗合金热电材料的高压合成及热电性能

韩鹏举; 胡美华; 毕宁; 王月月; 周绪彪; 李尚升

doi:10.11858/gywlxb.20220601

磷掺杂硅锗合金热电材料的高压合成及热电性能

doi: 10.11858/gywlxb.20220601

1.
河南理工大学材料科学与工程学院, 河南焦作　454003
2.
河南理工大学化学化工学院, 河南焦作　454003

基金项目: 国家自然科学基金（52072113）

详细信息

作者简介:
韩鹏举（2000－），男，硕士研究生，主要从事热电材料研究. E-mail：han824132143@163.com

通讯作者:
胡美华（1982－），男，博士，副教授，主要从事超硬及热电材料研究. E-mail：humh@hpu.edu.cn

中图分类号: O521.2
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出版历程
- 收稿日期: 2022-05-31
- 修回日期: 2022-06-28
- 网络出版日期: 2022-11-21
- 刊出日期: 2022-12-05

Enhanced Thermoelectric Performance of P-Doped Silicon-Germanium Alloys Synthesized by High-Pressure Method

1.
School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, Henan, China
2.
School of Chemistry and Chemical Engineering, Henan Polytechnic University, Jiaozuo 454003, Henan, China

摘要

摘要: 热电材料是一种可以实现热能与电能相互转换的功能材料，硅锗合金作为优良的高温热电材料被应用于深空探测。采用高压合成法制备了磷掺杂n型SiGe合金Si₈₀Ge₂₀P_x （x=0, 1, 2），研究了其电输运和热输运特性。结果表明，高压合成样品具有多尺度缺陷。磷掺杂可以优化SiGe合金的电导率和Seebeck系数，1050 K时Si₈₀Ge₂₀P₁样品的功率因子较未掺杂样品提升了100%。同时，掺磷量的增加导致晶格热导率下降，1050 K时Si₈₀Ge₂₀P₂样品的热导率降低约80%。此外，Si₈₀Ge₂₀P_x的热电性能得到显著提升，1050 K时Si₈₀Ge₂₀P₂样品的热电优值达到1.1。
- 热电材料 /
- 硅锗合金 /
- 高压合成 /
- 热导率
Abstract: Thermoelectric material is a kind of functional material which could realize the conversion between thermal energy and electric energy. Silicon-germanium (SiGe) alloy is used in deep space exploration as a kind of high temperature thermoelectric material. In this work, P-doped n-type SiGe alloy was prepared by high pressure synthesis method. The electrical and thermal transport properties of Si₈₀Ge₂₀P_x (x=0, 1, 2) were characterized. The results show that the samples synthesized under high pressure have multi-scale defects. P-doping could optimize the electrical conductivity and Seebeck coefficient of SiGe alloy, the power factor of Si₈₀Ge₂₀P₁ sample is 100% higher than that of the undoped sample at 1050 K. Furthermore, the increase of P content leads to the decrease of lattice thermal conductivity, and the thermal conductivity of Si₈₀Ge₂₀P₂ sample decreases by about 80% at 1050 K. The thermoelectric properties of SiGe alloy are significantly improved, and the maximum figure of merit of Si₈₀Ge₂₀P₂ sample reached 1.1 at 1050 K.
- thermoelectric materials /
- silicon-germanium alloys /
- high-pressure synthesis /
- thermal conductivity

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图 1 国产六面顶压机(a)、碳化钨顶砧(b)和高压合成SiGe合金组装(c)

Figure 1. Domestic cubic high-pressure equipment (a), tungsten carbide anvil (b), and assembly of SiGe alloy synthesized by high-pressure (c)

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图 2 SiGe样品的XRD谱：(a) 混合球磨4 h的Si₈₀Ge₂₀P₂原料粉末；(b)～(d) 高压合成的Si₈₀Ge₂₀P_x(x=0, 1, 2)合金

Figure 2. XRD patterns of SiGe samples: (a) Si₈₀Ge₂₀P₂ raw materials mixed by ball milling for 4 h; (b) – (d) Si₈₀Ge₂₀P_x (x=0, 1, 2) alloys synthesized by high-pressure method

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图 3 高压合成的Si₈₀Ge₂₀P₁显微图像：(a) SEM图像，(b) HR-TEM图像

Figure 3. SEM (a) and HR-TEM (b) images of Si₈₀Ge₂₀P₁ alloys synthesized by high-pressure method

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图 4 Si₈₀Ge₂₀P_x （x=0, 1, 2）的电导率(a)、Seebeck系数(b)、功率因子(c)与温度的关系

Figure 4. Temperature dependence of (a) electrical conductivity, (b) Seebeck coefficient, and (c) power factor of Si₈₀Ge₂₀P_x (x=0, 1, 2) alloys

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图 5 Si₈₀Ge₂₀P_x（x=0, 1, 2）合金的热导率(a)与晶格热导率(b)与温度的关系

Figure 5. Temperature dependence of (a) thermal conductivity and (b) lattice thermal conductivity of Si₈₀Ge₂₀P_x (x=0, 1, 2) alloys

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图 6 Si₈₀Ge₂₀P_x （x=0, 1, 2）合金的热电优值ZT与温度的关系

Figure 6. Temperature dependence of thermoelectric optimum ZT of Si₈₀Ge₂₀P_x (x=0, 1, 2) alloys

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