镱薄膜传感器压阻灵敏度的研究

滕林 杨邦朝 杜晓松 周鸿仁 崔红玲 肖庆国

滕林, 杨邦朝, 杜晓松, 周鸿仁, 崔红玲, 肖庆国. 镱薄膜传感器压阻灵敏度的研究[J]. 高压物理学报, 2004, 18(1): 90-93 . doi: 10.11858/gywlxb.2004.01.016
引用本文: 滕林, 杨邦朝, 杜晓松, 周鸿仁, 崔红玲, 肖庆国. 镱薄膜传感器压阻灵敏度的研究[J]. 高压物理学报, 2004, 18(1): 90-93 . doi: 10.11858/gywlxb.2004.01.016
TENG Lin, YANG Bang-Chao, DU Xiao-Song, ZHOU Hong-Ren, CUI Hong-Ling, XIAO Qing-Guo. Research on Piezoresistance Sensitivity of Yb Film Sensor[J]. Chinese Journal of High Pressure Physics, 2004, 18(1): 90-93 . doi: 10.11858/gywlxb.2004.01.016
Citation: TENG Lin, YANG Bang-Chao, DU Xiao-Song, ZHOU Hong-Ren, CUI Hong-Ling, XIAO Qing-Guo. Research on Piezoresistance Sensitivity of Yb Film Sensor[J]. Chinese Journal of High Pressure Physics, 2004, 18(1): 90-93 . doi: 10.11858/gywlxb.2004.01.016

镱薄膜传感器压阻灵敏度的研究

doi: 10.11858/gywlxb.2004.01.016
详细信息
    通讯作者:

    滕林

Research on Piezoresistance Sensitivity of Yb Film Sensor

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    Corresponding author: TENG Lin
  • 摘要: 采用真空蒸发工艺制备镱薄膜传感器,在小于1 GPa压力范围内对未经任何处理和300 ℃真空热处理1 h两组镱薄膜传感器进行准静态加载标定,后者的压阻系数明显高于前者,并且大于箔式镱传感器的压阻系数,结合扫描电镜和电学性能测试分析,发现热处理有助于薄膜晶粒长大,降低薄膜电阻率,从而提高了镱薄膜传感器的压阻灵敏度。XRD测试分析结果表明,加压有促使薄膜晶粒长大的趋势。镱薄膜传感器制作工艺简单、性能稳定,在工业中具有广泛的用途。

     

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出版历程
  • 收稿日期:  2003-07-01
  • 修回日期:  2003-10-17
  • 发布日期:  2004-03-05

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